An Overview of Atomic Layer Deposition and its role ... insulating materials like SiO2 cannot ... semiconductor oxide devices are zirconium, hafnium, ...

Patent US Atomic layer deposited .

A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple ... and/or aluminum by atomic layer deposition onto a ...

Patent US Atomic layer deposition of .

The use of atomic layer deposition ... Genus, Inc. Apparatus and method ... "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides", Chem. Mater. 16, ...

Patent US Electronic device having a hafnium ...

The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...

Patent US Insitu post atomic layer deposition ...

Systems and methods for insitu post atomic layer deposition ... Atomic layer deposited zirconium ... oxide and hafnium oxide using atomic layer deposition:

Patent US Atomic layer deposition of .

Genus, Inc. Radicalassisted ... Apparatuses and methods for atomic layer deposition of hafniumcontaining highk ... Insulating film formation method which exhibits ...

Atomic layer deposited lanthanum hafnium oxide .

... layers provide an insulating layer in a variety of ... Atomic layer deposition of zirconiumdoped ... Atomic layer deposition of hafnium lanthanum ...

Patent US Method for hafnium nitride deposition

The present invention generally is a method for forming a highk dielectric layer, comprising depositing a hafnium compound by atomic layer deposition .

Patent US Atomic layer deposited zirconium ...

A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric ...

Patent US Atomic layer deposited ...

... includes forming a layer of zirconium oxide by atomic layer deposition. ... for atomic layer deposition of hafniumcontaining high ... an insulating metal oxide ...

Patent US Methods of using atomic layer ...

364 rows· Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. .

USB1 Atomic layer deposition of capacitor ...

A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to ... Atomic layer deposition of capacitor ... hafnium oxide and zirconium ...

Patent US ALD metal oxide deposition .

The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds.

Systems and methods for forming zirconium and/or hafnium ...

Sep 26, 2006· A method of forming (and apparatus for forming) a zirconium and/or hafniumcontaining layer on a substrate, particularly a semiconductor substrate or ...

Patent US In situ deposition of different ...

A plurality of cycles of a first atomic layer deposition ... In situ deposition of different metalcontaining films using ... the deposition of zirconium and hafnium ...

ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS .

The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one ta. .

Patent US Atomic layerdeposited hafnium .

A gate dielectric is formed by atomic layer deposition employing a hafnium ... Method for forming a gate insulating ... "Atomic Layer Deposition of Zirconium ...

SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ...

Dec 24, 2008· SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ... is an atomic layer deposition ... deposition process. The zirconium, hafnium.

Patent US Atomic layer deposition of .

Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...

Systems and Methods for Forming Metal Oxide Layers ...

Mar 22, 2012· A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate ...

Thin film atomic layer deposition equipment for ...

Thin film atomic layer deposition equipment for semiconductor processing. ... Atomic layer deposition ... for hafnium–aluminate and zirconium–aluminate ...

Patent US Atomic layer deposition of .

The metal oxynitride layer may comprise a zirconium oxynitride layer, a hafnium ... insulating film using atomic layer deposition: ... Atomic layer deposition of ...

Patent US Atomic layer deposited zirconium ...

An embodiment for a method for forming an oxide film containing titanium and zirconium by atomic layer deposition ... Genus, Inc: Radical ... gate insulating layer ...

Patent US Pretreatment processes within .

For example, the dielectric material may contain hafnium oxide, zirconium ... Method for forming gate insulating layer having ... Atomic layer deposition of hafnium ...